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M58
Device Type
X
Architecture
P = multilevel, multiple bank, large buffer
X
Operating Voltage
R = Vdd=1.7V to 2.0V, Vddq=1.7V to 2.0V
XXX
Density
256 = 256Mbit512 = 512Mbit001 = 1Gbit
X
Technology
L = 65nm technology multilevel design
X
Memory Organization
E = Uniform blocks
XX
Speed
96 = 96ns
XXX
Package Type
ZAD = Stacked TFBGA105 D stacked footprintZAC = Stacked TFBGA107 C stacked footprint
X
Temperature Range
5 = -30°C to 85°C
Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.