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TC58
Toshiba CMOS Flash Memory
TC58 = Single chip
X
Type of NAND Flash
C = Serial interface NAND
X
Supply Voltage
V = 3.3VY = 1.8V
XX
Density
G0 = 1GbitG1 = 2GbitG2 = 4Gbit
X
Cell Level
S = 2 levels (1 bit/cell)
X
Page/Block Size
04kB / 256kB3 = 2kB / 128kB
X
Design Rule
H = 24nm
XXXX
Package
QAIE = SOP16RAIG = WSON8BAIN = BGA24
Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.