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HYF
Flash Memory Components
XX
Supply and I/O Voltage
31 = 3.3V Core and 1.8V I/O33 = 3.3V Core and 3.0V I/O
XX
Memory Type
DS = TwinNAND Single-Level cell (2bit/cell)
XXX
Memory Density
256 = 256Mbit512 = 512Mbit
XX
Organization
80 = x8 bit
X
Product Variation
0Standard product (Tape&Reel packing)4 = Standard product 1st die revision (Tape&Reel packing)
X
Process Technology
0PrototypeA = 170nmB = 170nm (enhanced speed)
X
Package Type
T = 48-pin TSOP
X
Temperature Range
C = Commercial (°C to 70°C)I = Industrial (-40°C to 85°C)
Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.