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H
SK Hynix Memory
9
MCP/PoP
XX
Product Mode
TQ = eMCP NAND DDR3
XX
Density, Stack, Block Size & Page Buffer for NVM
64 = 64Gb, SDP, LB, MLC
X
Voltage & I/O for NVM
A = 3.3V, x8
XX
Density, Stack, CH &CS for DRAM
8G = 8Gb, SDP
X
Voltage, I/O & Option for DRAM
T = 1.2V, x32, LPDDR3
X
Generation
A = 2nd
XX
Package Type
CU = FBGA221 (11.5x13mm)
X
Package Material
R = Lead & Halogen free
X
eMMC Speed
K = 200MHz
X
DRAM Speed
U = 1866Mbps
X
Temperature Range
M = Standard (-25°C to 85°C)
Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.
