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SST
Silicon Storage Technology inc.
XX
Device Type
34 = Concurrent SuperFlash memory
XF
Voltage
V = 2.7 to 3.3V
XXX
Device Density
160 = 1Mx16 / 2Mx8
XB
Bank Split
1 = 12Mbit + 4Mbit
XXX
Read Access Speed
80 = 80 ns
X
Minimum Endurance
4 = 10000 cycles
X
Temperature Range
C = Commercial (0°C to 70°C)E = Extended (-20°C to 85°C)
X
Package Type
E = TSOP (type 1, die up, 12x20mm )B1 = TFBGA (8x10mm)
X
Package Modifier
K = 48 leadsP = 56 balls
Note: Part number description table describes usual part-numbering system for more chips, therefore this table can contain information, that might not be valid for the actually selected chip. The information here are provided on the best-effort basis and might be either inaccurate or incoplete. Therefore always check the latest datasheet of the chip for part number description detail. If you find some inaccuracy, let us please know.