| KB | Samsung MCP(4 chip) Memory | |
| X | Small Classification | A = Mi NOR+Mi NOR+UtRAM+SRAMB = NOR+NOR+NAND+UtRAMC = NAND+UtRAM+UtRAM+SRAMD = NOR+NAND+SDRAM+SDRAME = NAND+NAND+SDRAM+SDRAMF = NOR+NOR+UtRAM+UtRAMG = NOR+NOR+OneNAND+UtRAMH = NOR+OneNAND+UtRAM+UtRAMJ = NOR+OneNAND+OneNAND+UtRAMK = NOR+NOR+NOR+OneNANDL = I NOR+I NOR+NAND+NANDM = NOR+NOR+OneNAND+SDRAMN = OneNAND+OneNAND+SDRAM+SDRAMP = NAND+OneNAND+SDRAM+SDRAMR = OneNAND+OneNAND+OneNAND+SDRAMS = NOR+OneNAND+OneNAND+SDRAM |
| XX | NOR Flash Density & Vcc & Org. & BB | 00 = None01 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Bottom boot block02 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Top boot block03 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Bottom/Top boot block04 = 64M*2, Vcc=3.0V, x16, Bank: 4/4/28/28, Top/Bottom boot block05 = 64M*2, Vcc=3.0V, x8/x16, Bank: 48/16,48/16, Bottom boot block06 = 64M*2, Vcc=3.0V, x8/x16, Bank: 16/48,16/48, Top boot block07 = 64M, Vcc=3.0V, x16, Bank: 16/48, Bottom boot block08 = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank:8Mb*16*2, Bottom boot block09 = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank: 8Mb*16*2, Top boot block10 = 256M, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Top boot block11 = 256M, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom boot block12 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Top boot block13 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom boot block15 = Intel 256M*2, Vcc=1.8V, Vccq=1.8V, x16 burst, Bank: 16Mb*16, Bottom/Top boot block16 = 256M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Top boot block17 = 256M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Bottom boot block18 = 256M*3, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Bottom/Top/Top boot block19 = 256M*3, Vcc=1.8V, Vccq=1.8V, x16 muxed, Bank: 16Mb*16, Bottom/Top/Bottom boot block20 = 256M*2, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16, Botom/Top boot block21 = 128M, Vcc=1.8V, Vccq=1.8V, x16, Bank: 16Mb*16 muxed, Top boot block |
| X | NAND Flash Density & Vcc & Org. | 0NoneA = 128M, Vcc=3.0V, Vccq=3.0V, x16B = 256M, Vcc=3.0V, Vccq=3.0V, x16C = 256M*2, Vcc=3.0V, Vccq=3.0V, x16D = 256M*2, Vcc=1.8V, Vccq=1.8V, x16E = 512M One, Vcc=1.8V, Vccq=1.8V, x16F = 512M*2, Vcc=2.65V, Vccq=2.65V, x8H = 1G*2, Vcc=1.8V, Vccq=1.8V, x8G = 512M*2, Vcc=1.8V, Vccq=1.8V, x8J = 512M*2, Vcc=3.0V, Vccq=3.0V, x8K = 512M One*2, Vcc=1.8V, Vccq=1.8V, x16L = 256M*2, Vcc=3.0V, Vccq=3.0V, x8M = 256M*2, Vcc=2.65V, Vccq=2.65V, x16N = 512M*2, Vcc=1.8V, Vccq=1.8V, x8P = 1G, Vcc=1.8V, Vccq=1.8V, x8R = 512M One, Vcc=1.8V, Vccq=1.8V, x16, MuxedS = 1G*2, Vcc=2.65V, Vccq=2.65V, x8, SBT = 1G, Vcc=1.8V, Vccq=1.8V, x16, MuxedU = 1G*2, Vcc=3.0V, Vccq=3.0V, x16, 1CSV = 1G OneNAND*2, Vcc=1.8V, Vccq=1.8V, x16W = 512M NAND+1G OneNAND, Vcc=1.8V, Vccq=1.8V, x8/x16X = 512 NAND + 512M OneNAND, Vcc=1.8V, Vccq=1.8V, x8/x16Y = 1G OneNAND*3, Vcc=1.8V, Vccq=1.8V, x16 |
| X | UtRAM Density & Vcc & Org. | 0None1 = 32M, Vcc=3.0V, Vccq=3.0V, x163 = 32M, Vcc=3.0V, Vccq=3.0V, x16, Page4 = 64M, Vcc=3.0V, Vccq=3.0V, x165 = 64M, Vcc=3.0V, Vccq=3.0V, x16, Page6 = 64M+32M, Vcc=3.0V, Vccq=3.0V, x167 = 64M*2, Vcc=3.0V, Vccq=3.0V, x16, Page8 = 64M*2, Vcc=2.6V, Vccq=1.8V, x16, Burst9 = 64M, Vcc=3.0V, Vccq=1.8V, x16A = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Burst, 2CSB = 128M, Vcc=1.8V, Vccq=1.8V, x16, BurstC = 128M, Vcc=1.8V, Vccq=1.8V, x16, BurstD = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Burst, 1CSE = 128M*2, Vcc=1.8V, Vccq=1.8V, x16, Page, 1CSZ = 64M, Vcc=3.0V, Vccq=3.0V, x16, PRAM |
| X | SDRAM density & Vcc & Org. | 0NoneA = 8M, Vcc=3.0V, x16 |
| X | DRAM I/F Density & Vcc & Org. | 0None1 = SDRAM, 128M, Vcc=3.0V, Vccq=3.0V, x162 = SDRAM, 128M*2, Vcc=1.8V, Vccq=1.8V, x323 = SDRAM, 256M*2, Vcc=1.8V, Vccq=1.8V, x164 = MDDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CS5 = MSDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CS6 = MSDR, 256M*2, Vcc=3.0V, Vccq=3.0V, x167 = MDDR, 256M*2, Vcc=2.5V, Vccq=2.5V, x328 = MDDR, 512M, Vcc=1.8V, Vccq=1.8V, x169 = MSDR, 256M*2, Vcc=1.8V, Vccq=1.8V, x32, 1CS, 1CKA = MSDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32, 1CSB = MSDR, 256M*2, Vcc=2.5V, Vccq=2.5V, x32, 2CSC = MDDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32D = M-SDR, 512M*2, Vcc=1.8V, Vccq=1.8V, x32, 2CSE = M-SDR, 512M, Vcc=1.8V, Vccq=1.8V, x32F = SDRAM, 128M, Vcc=1.8V, Vccq=1.8V, x16 |
| X | Generation | M = 1st generationA = 2nd generationB = 3rd generationC = 4th generationD = 5th generationE = 6th generationF = 7th generationG = 8th generation |
| X | Package Type | D = FBGA (Lead-free)E = LGA(No ball)F = FBGAG = LGA (Lead-free)P = FBGA (OSP)S = FBGA (OSP Lead-free)T = TBGA |
| XXX | Speed | 401 = 85ns, 85ns, 85ns, 55ns402 = 70ns, 70ns, 50ns, 70ns403 = 50ns, 70ns, 85ns, 55ns404 = 50ns, 70ns, 70ns, 70ns405 = 50ns, 70ns, 70ns, 55ns406 = 70ns, 50ns, 50ns, 10ns407 = 50ns, 50ns, 15ns, 15ns409 = 50ns, 50ns, 9.5ns, 9.5ns410 = 70ns, 70ns, 76ns, 70ns411 = 50ns, 50ns, 9ns, 9ns412 = 12ns, 50ns, 15ns, 15ns413 = 50ns, 50ns, 7.5ns, 7.5ns414 = 18.5ns, 18.5ns, 15ns, 15ns415 = 50ns, 50ns, 6ns, 6ns416 = 15ns, 18.5ns, 18.5ns, 15ns417 = 14ns, 14ns, 50ns, 50ns418 = 80ns, 70ns, 76ns, 70ns419 = 18.5ns, 18.5ns, 18.5ns, 18.5ns420 = 15ns, 15ns, 15ns, 15ns421 = 80ns, 70ns, 70ns, 70ns422 = 18.5ns, 18.5ns, 18.5ns, 9ns423 = 18.5ns, 18.5ns, 6ns, 6ns424 = 60ns, 18.5ns, 7.5ns, 7.5ns425 = 18.5ns, 18.5ns, 7.5ns, 7.5ns426 = 18.5ns, 18.5ns, 8.6ns, 8.6ns427 = 76ns, 76ns, 76ns, 9ns428 = 15ns, 18ns, 18ns, 7.5ns429 = 60ns, 60ns, 9ns, 9ns999 = Daisychain |
| X | Packing Type | T = Tape&ReelNumber = Other (Tray, Tube, Jar)S = Stack |
| XX | Customer "Customer List Reference" | |
