| K | Memory | |
| L | MOVI NAND, MCP | |
| X | NAND Function | E = Error free NANDS = eSSDC = Cartridge SIPL = LBA NANDM = moviNAND |
| XX | Embedded NAND Density | 28 = 128MByte56 = 256MByte12 = 512MByte1G = 1GByte2G = 2GByte3G = 3GByte4G = 4GByte8G = 8GByteAG = 16GByteBG = 32GByteCG = 64GByteDG = 128GByte |
| X | Composition | 1 = NAND1 + Microcontroller2 = NAND2 + Microcontroller3 = NAND3 + Microcontroller4 = NAND4 + Microcontroller8 = NAND8 + Microcontroller |
| X | NAND Small Clasification(Type/Density) | A = MLC/2GBit, Multi bit level cell (2bit)B = MLC/4GBit, Multi bit level cell (2bit)C = MLC/8GBit, Multi bit level cell (2bit)D = MLC/16GBit, Multi bit level cell (2bit)E = MLC/32GBit, Multi bit level cell (2bit)Z = 3bit MLC/16GBit, Multi bit level cell (3bit, 4bit)1 = SLC, 1GBit, Single bit level cell9 = SLC, 2Gbit (x16 NAND Oprion), Single bit level cell |
| X | Supply Voltage, Mode | A = Vcc=2.5V to 3.6V, Vccq=2.5V to 3.6V, single modeB = Vcc=2.5V to 2.9V, Vccq=None, single modeC = Vcc=2.5V to 3.6V, Vccq=1.65V to 1.95V, single modeD = Vcc=1.65V to 1.95V, Vccq=2.5V to 3.6V, single modeE = Vcc=2.5V to 3.6V, Vccq=1.65V to 1.95V, or 2.5V to 3.6V, dual modeQ = Vcc=1.7V to 1.95V, Vccq=None, single modeU = Vcc=2.7V to 3.6V, Vccq=None, single mode |
| X | Controller | A = S3C49RAA01D = S3C49VDX01E = S3C49VDX03M = MSP1010N = S3C49NBX01O = S3C49NBX02R = S3C49RAX01S = SK6626T = S3C49TBX01V = S3C49VCX03 |
| X | Component Generation (NAND Generation) | M = 1st generationA = 3nd generationB = 3rd generationD = 5th generationE = 6th generationX = NAND option |
| X | Package Type | A = FBGA(Halogen-free, lead-free, OSP)12x16B = FBGA(Halogen-free, lead-free, OSP)S = FBGA(OSP Lead-free)I = LGA(Halogen-free, Lead-free)L = LGA(Lead-free)P = TSOP(Lead-free) |
| X | Revision | 0None1 = EVT12 = EVT23 = EVT34 = EVT4 |
| X | Speed | 0None |
| X | Reserved | 1 = Normal sample2 = Premium sample |
